Step and flash imprint lithography for quantum dots based room temperature single electron transistor fabrication

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In this work we demonstrate the successful fabrication using step and flash imprint lithography – reverse tone (SFIL-R)™ coupled with a novel Focus ion beam (FIB) quantum dot (QD) deposition technique to produce of a full array of room temperature single electron transistors (RT-SET) based on tungsten quantum dot arrays. The integration of SFIL-R and FIB technology process flow has been developed in order to explore the possibility of an ultra low power, monolithically integrated nano-electronics circuits using RT-SET. We describe the parallel production of RT-SET devices using SFIL-R. The yield of the mass produced devices are examined. These QD based devices are characterized and initial results are evaluated.

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Copyright © 2009 Elsevier B.V. Published by Elsevier B.V. All rights reserved.

Publisher's version of record: https://doi.org/10.1016/j.mee.2008.12.094

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Microelectronic Engineering