Step and flash imprint lithography for quantum dots based room temperature single electron transistor fabrication
In this work we demonstrate the successful fabrication using step and flash imprint lithography – reverse tone (SFIL-R)™ coupled with a novel Focus ion beam (FIB) quantum dot (QD) deposition technique to produce of a full array of room temperature single electron transistors (RT-SET) based on tungsten quantum dot arrays. The integration of SFIL-R and FIB technology process flow has been developed in order to explore the possibility of an ultra low power, monolithically integrated nano-electronics circuits using RT-SET. We describe the parallel production of RT-SET devices using SFIL-R. The yield of the mass produced devices are examined. These QD based devices are characterized and initial results are evaluated.
Cheam, D. D.,
Karre, P. S.,
Bergstrom, P. L.
Step and flash imprint lithography for quantum dots based room temperature single electron transistor fabrication.
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