Title

Step and flash imprint lithography for quantum dots based room temperature single electron transistor fabrication

Authors

Daw Don Cheam, Michigan Technological University
P. Santosh Kumar Karre, Michigan Technological University
Marylene Palard, University of Texas at Austin
Paul L. Bergstrom, Michigan Technological UniversityFollow

Document Type

Article

Publication Date

4-2009

Abstract

In this work we demonstrate the successful fabrication using step and flash imprint lithography – reverse tone (SFIL-R)™ coupled with a novel Focus ion beam (FIB) quantum dot (QD) deposition technique to produce of a full array of room temperature single electron transistors (RT-SET) based on tungsten quantum dot arrays. The integration of SFIL-R and FIB technology process flow has been developed in order to explore the possibility of an ultra low power, monolithically integrated nano-electronics circuits using RT-SET. We describe the parallel production of RT-SET devices using SFIL-R. The yield of the mass produced devices are examined. These QD based devices are characterized and initial results are evaluated.

Publisher's Statement

Copyright © 2009 Elsevier B.V. Published by Elsevier B.V. All rights reserved.

Publisher's version of record: https://doi.org/10.1016/j.mee.2008.12.094

Publication Title

Microelectronic Engineering

Recommended Citation

Cheam, D. D., Karre, P. S., Palard, M., & Bergstrom, P. L. (2009). Step and flash imprint lithography for quantum dots based room temperature single electron transistor fabrication. Microelectronic Engineering, 86(4-6), 646-649. http://doi.org/10.1016/j.mee.2008.12.094
Retrieved from: https://digitalcommons.mtu.edu/ece_fp/19