Title

Thin porous silicon films displaying a near-surface dip in porosity

Authors

Josefine Helene Selj, Institute for Energy Technology
Annett Thogersen, Institute for Energy Technology
Paul L. Bergstrom, Michigan Technological UniversityFollow
Sean Erik Foss, Institute for Energy Technology

Document Type

Conference Paper/Presentation

Publication Date

11-2010

Abstract

Studies of the depth profile of Porous Silicon (PS) structures etched under a wide span of different formation parameters have been performed using Spectroscopic Ellipsometry (SE) and Transmission Electron Microscopy (TEM). Incorporation of a sharp dip in the porosity profiles close to the sample surface was required for several types of PS films in order to successfully fit ellipsometric data to a Bruggeman Effective Medium Model (BEMA). TEM studies show a corresponding lower porosity region near the sample surface. Investigations have been performed in order to understand the origin of this dip and to explore the parameter space where it is detected. The detected low porosity region is discussed in the context of current knowledge on pore nucleation and growth mechanisms of PS.

Publisher's Statement

© 2011 ECS - The Electrochemical Society. Publisher's version of record: http://dx.doi.org/10.1149/1.3553169

Publication Title

ECS Transactions Pits and Pores

Recommended Citation

Selj, J. H., Thogersen, A., Bergstrom, P. L., & Foss, S. E. (2010). Thin porous silicon films displaying a near-surface dip in porosity. ECS Transactions Pits and Pores, 33(16), 181-189. http://doi.org/10.1149/1.3553169
Retrieved from: https://digitalcommons.mtu.edu/ece_fp/15