Title

Leakage current in single electron device due to implanted gallium dopants by focus ion beam

Authors

Daw Don Cheam, Michigan Technological University
Karl A. Walczak, Michigan Technological University
Manoranjan Acharya, Michigan Technological University
Craig FriedrichFollow
Paul L. Bergstrom, Michigan Technological UniversityFollow

Document Type

Article

Publication Date

3-17-2011

Abstract

Focus ion beam (FIB) technology has been employed to fabricate quantum dot based devices such as the single electron transistor (SET) on a silicon substrate with Cr/Au/Al₂O₃ film stack. It was discovered that the dwell time of FIB gallium beam on an area impacted the dosage of gallium ions implanted into the insulating substrate, creating a highly doped region which could lead to device leakage current. This work focus on the potential electron transport possible when an over-dosed gallium rich Al₂O₃ layer will lead to leakage current between otherwise electrically isolated contact pads. Using the Keithley 4200 semiconductor parametric analyzer (SPA) and the energy dispersive X-ray spectrometer (EDS) analysis; we demonstrate the detrimental effect of leakage current in the range of pA, observed between drain/source electrodes due to the high dose of gallium implanted into the insulating Al₂O₃. The optimized FIB etching parameters to produce a high quality of device functionality with no leakage current is also demonstrated.

Publisher's Statement

Copyright © 2011 Elsevier B.V. All rights reserved. Publisher's version of record: https://doi.org/10.1016/j.mee.2011.02.114

Publication Title

Microelectronic Engineering

Recommended Citation

Cheam, D. D., Walczak, K. A., Acharya, M., Friedrich, C., & Bergstrom, P. L. (2011). Leakage current in single electron device due to implanted gallium dopants by focus ion beam. Microelectronic Engineering, 88(8), 1906-1909. http://doi.org/10.1016/j.mee.2011.02.114
Retrieved from: https://digitalcommons.mtu.edu/ece_fp/12