Title

Ambipolar behaviors of hydrogen-incorporated ZnO nanowires

Authors

Abhishek Prasad, Michigan Technological University
Archana Pandey, Michigan Technological University
Vamsi Krishna Kunapuli, Michigan Technological University
Paul L. Bergstrom, Michigan Technological UniversityFollow
Yoke Khin Yap, Michigan Technological UniversityFollow

Document Type

Article

Publication Date

3-14-2012

Abstract

Ambipolar behaviors of zinc oxide nanowires (ZnO NWs) are obtained for the first time by controlled annealing in hydrogen ambient. Optimum annealing can create p-type acceptors into ZnO NWs while maintaining the n-type donors from the as-grown samples. We found that such optimum condition must be one that is more than sufficient to eliminate the green photoluminescence (PL) band of the as-grown ZnO NWs. All of these can be explained by an ab initio model of Zn vacancy-hydrogen complexes, which can served as the donor, acceptor, or green PL quencher depending on the number of hydrogen atoms involved.

Publisher's Statement

Copyright © 2012 American Chemical Society. Publisher's version of record: https://doi.org/10.1021/jp3003118

Publication Title

The Journal of Physical Chemistry C

Recommended Citation

Prasad, A., Pandey, A., Kunapuli, V., Bergstrom, P. L., & Yap, Y. K. (2012). Ambipolar behaviors of hydrogen-incorporated ZnO nanowires. The Journal of Physical Chemistry C, 116(14), 8210-8215. http://doi.org/10.1021/jp3003118
Retrieved from: https://digitalcommons.mtu.edu/ece_fp/11