Effect of annealing on the electrical and structural properties of rf-sputtered TaSi < inf> 2 Schottky contacts to GaAs
Document Type
Article
Publication Date
12-1-1988
Abstract
TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900°C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600°C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600°C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film.
Publication Title
Journal of Applied Physics
Recommended Citation
Whipple, G.,
Thompson, M.,
&
Kulkarni, A.
(1988).
Effect of annealing on the electrical and structural properties of rf-sputtered TaSi < inf> 2 Schottky contacts to GaAs.
Journal of Applied Physics,
64(5), 2519-2522.
http://doi.org/10.1063/1.341635
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/8897