Chemical bonding in group III nitrides
Document Type
Article
Publication Date
4-17-2002
Abstract
We analyze in this article the evolution of the chemical bonding in group III nitrides (MN, M = Al, Ga, In), from the N-N bond dominated small clusters to the M-N bond dominated crystals, with the aim of explaining how the strong multiple bond of N2 is destabilized with the increase in coordination. The picture that emerges is that of a partially ionic bond in the solid state, which is also present in all the clusters. The covalent N-N bond, however, shows a gradual decrease of its strength due to the charge transfer from the metal atoms. Overall, Al clusters are more ionic than Ga and In clusters, and thus the N-N bond is weakest in them. The nitrogen atom charge is seen to be proportional to the metal coordination, being thus a bond-related property, and dependent on the M-N distance. This explains the behavior observed in previous investigations, and can be used as a guide in predicting the structures and defects on semiconductor quantum dot or thin film devices of these compounds.
Publication Title
Journal of the American Chemical Society
Recommended Citation
Costales, A.,
Blanco, M.,
Martín Pendás, Á.,
Kandalam, A.,
&
Pandey, R.
(2002).
Chemical bonding in group III nitrides.
Journal of the American Chemical Society,
124(15), 4116-4123.
http://doi.org/10.1021/ja017380o
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/8033
