A unique black TiO ₂ created from CO-induced oxidation of defect-rich TiO ₂

Authors

Youjie Tong, Shanghai Jiao Tong University
Siyuan Fang, Michigan Technological UniversityFollow
Chunling Wang, Michigan Technological UniversityFollow
Yun Hang Hu, Shanghai Jiao Tong University

Document Type

Article

Publication Date

7-2021

Department

Department of Materials Science and Engineering

Abstract

Black TiO is an emerging semiconductor with a narrowed band gap for visible light absorption. Very recently, CO, as a reductant, was explored as a substitute of H to prepare black TiO . In this work, we surprisedly found that CO could act as an oxidant to remediate the oxygen vacancies in defect-rich TiO , accompanied with the introduction of carbon species into it, leading to the formation of a unique black TiO material. The light absorption of this material was significantly enhanced with an evidently narrowed band gap down to 2.79 eV. Furthermore, a mid-gap state emerged owing to the carbon species. These findings highlight a successful exploration in both black TiO synthesis and the application of CO as an oxidant. 2 2 2 2 2 2

Publication Title

Journal of Physics and Chemistry of Solids

Recommended Citation

Tong, Y., Fang, S., Wang, C., & Hu, Y. (2021). A unique black TiO ₂ created from CO-induced oxidation of defect-rich TiO ₂ . Journal of Physics and Chemistry of Solids, 154. http://doi.org/10.1016/j.jpcs.2021.110053
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/14702