Single junctions in zno varistors studied by current-voltage characteristics and deep level transient spectroscopy

Document Type

Article

Publication Date

1-1-1995

Abstract

The electronic properties of individual grain boundaries in ZnO varistors were characterized by current-voltage (I-V) measurements and high-temperature zero-bias deep level transient spectroscopy (DLTS). A single-junctionelectrode pattern was designed using photolithography in order to study these properties. It was found that interface trap energy levels and capture cross sections vary with the polarities of trap filling pulses. The behaviorindicates that the grain boundary potential barriers are not symmetric. Asymmetry was also observed in I-V measurements. Intergranular differences in chemical composition, distribution of chemisorbed oxygen, and grainboundary microstructure were suggested to be responsible for the asymmetry in electronic properties. © 1995 The Japan Society of Applied Physics.

Publication Title

Japanese Journal of Applied Physics

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