Modeling of the transverse delays in modulation-doped heterojunction field-effect transistors
Document Type
Conference Proceeding
Publication Date
1-1-1991
Abstract
© 1991 IEEE. The authors have developed a computer-efficient algorithm and the related CAD oriented software to calculate the transverse propagation delay in a MODFET. The model has been used to study the dependence of these delays on the various MODFET parameters. The results can be utilized for the optimization of high-speed circuits.
Publication Title
Proceedings - 1st Great Lakes Symposium on VLSI, GLSV 1991
Recommended Citation
Xu, W.,
&
Goel, A.
(1991).
Modeling of the transverse delays in modulation-doped heterojunction field-effect transistors.
Proceedings - 1st Great Lakes Symposium on VLSI, GLSV 1991, 328-329.
http://doi.org/10.1109/GLSV.1991.143988
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/10513