Self-assembly of quantum-dot molecules: Heterogeneous nucleation of SiGe islands on Si(100)

Document Type

Article

Publication Date

1-1-1998

Abstract

We report on the formation of clusters of self-assembled quantum dots (termed quantum-dot molecules). Each cluster, typically consisting of four closely spaced SiGe islands, is formed by preferential nucleation around the edges of square pits. Uniform-sized pits are directly formed by controlled deposition of Si and C on the initial Si(100) surface, followed by the growth of a thin Si buffer layer. Formation of (105) pit walls as precursors to island formation and elastic relaxation effects near the pits appear to influence island nucleation. Quantum-dot molecules may have potential applications in nanoelectronic devices and may exhibit novel electronic and optical properties. © 1998 The American Physical Society.

Publication Title

Physical Review Letters

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