Temperature dependence of SiGe coherent island formation on Si(100): Anomalous reentrant behavior
Document Type
Article
Publication Date
1-1-1998
Abstract
Studies of the temperature dependence (450-800°C) of coherent island formation in SiGe alloys (nominal composition ∼25% Ge) on Si(100) reveal an anomalous islanding behavior. Three dimensional island formation appears to be suppressed at temperatures below 450°C, and again in a narrow temperature window near ∼600°C. At all other temperatures, faceted 3D islands are observed. The anomalous effect at intermediate temperatures is qualitatively explained on the basis of a relative reduction in the driving force due to temperature dependent behavior of Ge segregation and interdiffusion. © 1998 The American Physical Society.
Publication Title
Physical Review Letters
Recommended Citation
Deng, X.,
Weil, J.,
&
Krishnamurthy, M.
(1998).
Temperature dependence of SiGe coherent island formation on Si(100): Anomalous reentrant behavior.
Physical Review Letters,
80(21), 4721-4724.
http://doi.org/10.1103/PhysRevLett.80.4721
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/10101