Title

Mass production of room temperature single electron transistors using step & flash imprint lithography and lift-Off technique

Authors

Daw Don Cheam, Michigan Technological University
P. Santosh Kumar Karre, Michigan Technological University
Marylene Palard, University of Texas at Austin
Paul L. Bergstrom, Michigan Technological UniversityFollow

Document Type

Conference Paper/Presentation

Publication Date

8-2008

Abstract

We report the use of step & flash imprint lithography reverse tone (SFIL-R^TM) and liftoff technique to fabricate sub-100 nm metal nano-wires as the electrodes for room temperature single electron transistors (RT-SET). The optimized process flow was performed on approximately 300 imprints, for a total of 714,000 devices. Each imprinted device contains drain/source/gate electrodes. Multiple electrode geometries were designed to explore the impact of device parameters. Following electrode formation, Tungsten quantum dots (QD) were formed using a novel focus ion beam (FIB) deposition technique, resulting in room temperature single electron transistor (RT-SET) devices. The RT-SET devices are tested using a Keithley 4200-SCS semiconductor parametric analyzer.

Publisher's Statement

Copyright © 2008, IEEE. Publisher's version of record: https://doi.org/10.1109/NANO.2008.58

Publication Title

2008 8th IEEE Conference on Nanotechnology

Recommended Citation

Cheam, D. D., Karre, P. S., Palard, M., & Bergstrom, P. L. (2008). Mass production of room temperature single electron transistors using step & flash imprint lithography and lift-Off technique. 2008 8th IEEE Conference on Nanotechnology, 175-178. http://doi.org/10.1109/NANO.2008.58
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