Date of Award
2024
Document Type
Open Access Master's Report
Degree Name
Master of Science in Physics (MS)
Administrative Home Department
Department of Physics
Advisor 1
Yoke Khin Yap
Advisor 2
Jae Yong Suh
Committee Member 1
John Jaszczak
Abstract
Monolayers of transition metal dichalcogenides (TMDCs) have attracted significant attention as the rare two-dimensional (2D) semiconducting materials with a direct energy band gap. Chemical vapour deposition (CVD) is one of the scalable techniques to grow atomically thin TMDC monolayers in high quality, but it requires high growth temperature. Herein we report the growth of MoS2, WS2 and MoSe2 by a one-step halide-assisted CVD method using NaCl and KCl as the catalysts. These halides could reduce the growth temperature of TMDCS by reacting with the precursors (TMDC powders) to form volatile intermediate compounds as the growth species. We use optical microscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques to study the morphological properties of the CVD-grown TMDCs. We were subsequently successful to transfer the CVD-grown monolayers into desired target substrates using chemical etching method.
Recommended Citation
Balasubramaniam, Vinaayak Sivam, "HALIDE-ASSISTED GROWTH OF TRANSITION METAL DICHALCOGENIDES", Open Access Master's Report, Michigan Technological University, 2024.
https://digitalcommons.mtu.edu/etdr/1796