Title

Giant intrinsic carrier mobilities in graphene and its bilayer

Authors

S. V. Morozov, University of Manchester
K. S. Novoselov, University of Manchester
M. I. Katsnelson, University of Nijmegen
F. Schedin, University of Manchester
D. C. Elias, University of Manchester
John A. Jaszczak, Michigan Technological UniversityFollow
A. K. Geim, University of Manchester

Document Type

Article

Publication Date

1-7-2008

Abstract

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200,000 cm²/V s are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like) increase in resistivity observed above ∼200K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.

Publisher's Statement

© 2208 American Physical Society. All rights reserved. Publisher's version of record: http://dx.doi.org/10.1103/PhysRevLett.100.016602

Publication Title

Physical Review Letters

Recommended Citation

Morozov, S. V., Novoselov, K. S., Katsnelson, M. I., Schedin, F., Elias, D. C., Jaszczak, J. A., & Geim, A. K. (2008). Giant intrinsic carrier mobilities in graphene and its bilayer. Physical Review Letters, 100(1). http://doi.org/10.1103/PhysRevLett.100.016602
Retrieved from: https://digitalcommons.mtu.edu/physics-fp/37

Version

Publisher's PDF