Document Type
Article
Publication Date
10-29-2009
Abstract
We report here, an investigation on electrical and structural-microstructural properties of an individual ZnO nanobelt via in situ transmission electron microscopy using an atomic force microscopy (AFM) system. The I-V characteristics of the ZnO nanobelt, just in contact with the AFM tip indicates the insulating behavior, however, it behaves like a semiconductor under applied stress. Analysis of the high resolution lattice images and the corresponding electron diffraction patterns shows that each ZnO nanobelt is a single crystalline, having wurtzite hexagonal structure (a=0.324 nm, c=0.520 66 nm) with a general growth direction of (1010).
Publication Title
Applied Physics Letters
Recommended Citation
Asthana, A.,
Momeni, K.,
Prasad, A.,
Yap, Y. K.,
&
Yassar, R. S.
(2009).
In situ probing of electromechanical properties of an individual ZnO nanobelt.
Applied Physics Letters,
95, 172106.
http://doi.org/10.1063/1.3241075
Retrieved from: https://digitalcommons.mtu.edu/physics-fp/299
Version
Publisher's PDF
Publisher's Statement
© 2009 American Institute of Physics. Publisher’s version of record: https://doi.org/10.1063/1.3241075