Document Type
Article
Publication Date
9-13-2011
Abstract
We propose an orbital-controlled model to explain the gate field induced switching of current in a semiconducting PbS-nanowire junction. A single-particle scattering formalism in conjunction with a posteriori density-functional approach involving a hybrid functional is used to study the electronic current; both first- and higher-order Stark effects are explicitly treated in our model. Our calculation reveals that after a threshold gate voltage, orbital mixing produces p components at the S atoms in the participating orbitals. This results in an interlayer orbital interaction that allows electrons to delocalize along the channel axis. As a consequence, a higher conductance state is found. A similar feature is also found in a PbSe nanowire junction, which suggests that this model can be used universally to explain the gate field induced switching of current in lead-chalcogenide nanowire junctions.
Publication Title
Physical Review B
Recommended Citation
Mandal, S.,
&
Pati, R.
(2011).
Mechanism behind the switching of current induced by a gate field in a semiconducting nanowire junction.
Physical Review B,
84.
http://doi.org/10.1103/PhysRevB.84.115306
Retrieved from: https://digitalcommons.mtu.edu/physics-fp/112
Version
Publisher's PDF
Publisher's Statement
© 2011 American Physical Society. Article deposited here in compliance with publisher policy. Publisher's version of record: https://doi.org/10.1103/PhysRevB.84.115306