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Abstract
The tunneling channel of a field effect transistor comprising a plurality of tunneling elements contacting a channel substrate. Applying a source-drain voltage of greater than a turn-on voltage produces a source-drain current of greater than about 10 pA. Applying a source-drain voltage of less than a turn-on voltage produces a source-drain current of less than about 10 pA. The turn-on voltage at room temperature is between about 0.1V and about 40V.
Patent Number
US 9,825,154 B2
Assignee
Michigan Technological University, Houghton, MI (US)
Application Number
14/359,818
Date Filed
11-28-2012
Certificate of Correction
No
Issue Date
11-21-2017
Disciplines
Physics
Recommended Citation
Yap, Yoke Khin, "Room temperature tunneling switches and methods of making and using the same" (2017). Michigan Tech Patents. 136.
https://digitalcommons.mtu.edu/patents/136
Comments
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