Direct Growth of High Mobility and Low-Noise LateralMoS2–Graphene Heterostructure Electronics
Document Type
Article
Publication Date
6-19-2017
Department
Department of Mechanical Engineering-Engineering Mechanics
Abstract
Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS2–graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS2–graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS2–metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS2–graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.
Publication Title
Small
Recommended Citation
Behranginia, A.,
Yasaei, P.,
Majee, A. K.,
Sangwan, V. K.,
Long, F.,
Foss, C. J.,
Foroozan, T.,
Fuladi, S.,
Hantehzadeh, M. R.,
Shahbazian-Yassar, R.,
Hersam, M. C.,
Aksamija, Z.,
&
Salehi-Khojin, A.
(2017).
Direct Growth of High Mobility and Low-Noise LateralMoS2–Graphene Heterostructure Electronics.
Small,
13(30).
http://doi.org/10.1002/smll.201604301
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p2/1977