Strain- and electric field-induced band gap modulation in nitride nanomembranes
Document Type
Article
Publication Date
5-15-2013
Abstract
The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. © 2013 IOP Publishing Ltd.
Publication Title
Journal of Physics Condensed Matter
Recommended Citation
Amorim, R.,
Zhong, X.,
Mukhopadhyay, S.,
Pandey, R.,
Rocha, A.,
&
Karna, S.
(2013).
Strain- and electric field-induced band gap modulation in nitride nanomembranes.
Journal of Physics Condensed Matter,
25(19).
http://doi.org/10.1088/0953-8984/25/19/195801
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/9633