Positron annihilation studies of vacancy related defects in ceramic and thin film pb(zr,ti)o3 materials
Document Type
Article
Publication Date
1-1-1995
Abstract
Preliminary positron annihilation studies of ceramic and thin film Pb(Zr,Ti)O3 (PZT) materials have been completed. The aim of this work was to examine the effects of processing conditions on vacancy related defects. Positron lifetime measurements on bulk PLZT plates showed an increase in positron trapping to a defect state with increasing grain size consistent with trapping to lead vacancy related defects formed through lead oxide loss during processing. Variable energy positron beam measurements were completed on bulk PLZT plates, sol-gel PZT thin films and laser ablated PLZT thin films. Films processed in a reduced oxygen atmosphere were found to give a higher S-parameter, due to an increase in concentration of neutral or negatively charged vacancy type defects, compared with material processed in an oxidizing ambient. © 1995, Taylor & Francis Group, LLC. All rights reserved.
Publication Title
Integrated Ferroelectrics
Recommended Citation
Keeble, D.,
Krishnan, A.,
Umlor, M.,
Lynn, K.,
Warren, W.,
Dimos, D.,
Tuttle, B.,
Ramesh, R.,
&
Poindexter, E.
(1995).
Positron annihilation studies of vacancy related defects in ceramic and thin film pb(zr,ti)o3 materials.
Integrated Ferroelectrics,
8(1-2), 121-128.
http://doi.org/10.1080/10584589508012306
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/9418