Nitrogen vacancy and oxygen impurity in AlN: Spintronic quantum dots
Document Type
Article
Publication Date
10-9-2009
Abstract
Point defects with non-zero spin are prototypical spintronic quantum dots. Here two anion-site defects in AlN are studied intensively in terms of their spin and related properties. The charged states of the nitrogen vacancy and substitutional oxygen impurity, in both ground and spin-flip states, are analyzed. The theoretical analysis includes optical absorption and emission, diffuse excited states, spin densities and local mode force constants. The relevance to spintronic quantum dots in semiconductors is discussed.
Publication Title
Radiation Effects and Defects in Solids
Recommended Citation
Vail, J.,
Haroon, T.,
Hernandez-Melgar, J.,
Chevrier, D.,
&
Pandey, R.
(2009).
Nitrogen vacancy and oxygen impurity in AlN: Spintronic quantum dots.
Radiation Effects and Defects in Solids,
164(10), 585-591.
http://doi.org/10.1080/10420150903188443
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/9370