Topological insulator behavior of WS < inf> 2 monolayer with square-octagon ring structure
Document Type
Conference Proceeding
Publication Date
5-23-2016
Abstract
© 2016 Author(s). We report electronic behavior of an allotrope of monolayer WS2 with a square octagon ring structure, refereed to as (so-WS2) within state-of-the-art density functional theory (DFT) calculations. The WS2 monolayer shows semi-metallic characteristics with Dirac-cone like features around Cyrillic capital letter GHE. Unlike p-orbital's Dirac-cone in graphene, the Dirac-cone in the so-WS2 monolayer originates from the d-electrons of the W atom in the lattice. Most interestingly, the spin-orbit interaction associated with d-electrons induce a finite band-gap that results into the metal-semiconductor transition and topological insulator-like behavior in the so-WS2 monolayer. These characteristics suggest the so-WS2 monolayer to be a promising candidate for the next-generation electronic and spintronics devices.
Publication Title
AIP Conference Proceedings
Recommended Citation
    
        
        Kumar, A.,
    
        
        Pandey, R.,
    
        
        Ahluwalia, P.,
    
        
            
            & 
        
        Tankeshwar, K.
    
    (2016).
    Topological insulator behavior of WS < inf> 2   monolayer with square-octagon ring structure.
    
        AIP Conference Proceedings,
        1731.
    
        http://doi.org/10.1063/1.4948215
    
	
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