Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers
Document Type
Article
Publication Date
1-30-2012
Abstract
Effect of electric field on the band structures of graphene/boron nitride (BN) and BN/BN bilayers is investigated within the framework of density functional theory. The calculated bandgap of the graphene/BN bilayer increases, although by small amount, with applied electric field. In the case of BN/BN bilayer, the bandgap decreases with the applied field in agreement with earlier studies. The modulation of bandgap in graphene/BN bilayers is dominated by the features of graphene and appears to be related to the modification in molecular orbitals as revealed by the calculated projected density of states. © 2012 American Institute of Physics.
Publication Title
Applied Physics Letters
Recommended Citation
Balu, R.,
Zhong, X.,
Pandey, R.,
&
Karna, S.
(2012).
Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers.
Applied Physics Letters,
100(5).
http://doi.org/10.1063/1.3679174
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/8931