Epitaxial growth and characterization of Ge < inf> 1-x C < inf> x alloys on Si(100)
Document Type
Article
Publication Date
12-1-1995
Abstract
The initial stages ( < 20 monolayers) of molecular beam epitaxial growth of Ge1-xCx on Si(100) has been studied using both in situ surface analytical techniques and ex situ electron microscopy. The Ge 1-xCx films studied had nominal C concentrations of 0.2 < x < 0.8. In situ reflection high-energy electron diffraction indicates crystalline, layer-by-layer growth for room temperature deposition of lower C concentrations (x < 0.4) films and amorphous growth for higher C concentrations. Subsequent high-temperature anneals between 350 and 600°C caused the Ge and C to phase separate, with the Ge forming defective islands while the C precipitates out of the diamond lattice. Mechanisms leading to the C concentration-dependent island morphologies are suggested. © 1995 American Institute of Physics.
Publication Title
Journal of Applied Physics
Recommended Citation
Krishnamurthy, M.,
Drucker, J.,
&
Challa, A.
(1995).
Epitaxial growth and characterization of Ge < inf> 1-x C < inf> x alloys on Si(100).
Journal of Applied Physics,
78(12), 7070-7073.
http://doi.org/10.1063/1.360412
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/8913