Stress tuning in crystal ion slicing to form single-crystal potassium tantalate films
Document Type
Article
Publication Date
10-2-2000
Abstract
We report on the implementation of crystal ion slicing in potassium tantalate (KTaO3). Deep-ion implantation is used to create a buried sacrificial layer in (001) single-crystal wafers of KTaO3. 10-μm-thick single-crystal films have been fabricated by adjusting the stress level in the implantation damage layer to induce room-temperature etchless exfoliation. Crack propagation is found to depend critically on implantation dose, with a threshold dose for exfoliation near 1 × 1016 cm-2. A significant implantation-induced etch selectivity between the sacrificial layer and the rest of the sample is also found. Capacitance measurements show that the films exhibit a bulk-like dielectric constant and loss tangents below 0.01 at low temperatures. © 2000 American Institute of Physics.
Publication Title
Applied Physics Letters
Recommended Citation
Levy, M.,
Osgood, R.,
Bhalla, A.,
Guo, R.,
Cross, L.,
Kumar, A.,
Sankaran, S.,
&
Bakhru, H.
(2000).
Stress tuning in crystal ion slicing to form single-crystal potassium tantalate films.
Applied Physics Letters,
77(14), 2124-2126.
http://doi.org/10.1063/1.1314294
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/8810
