Low temperature growth of boron nitride nanotubes on substrates

Authors

Jiesheng Wang, Michigan Technological University
Vijaya Kayastha, Michigan Technological University
Yoke Khin Yap, Michigan Technological UniversityFollow
Zhiyong Fan, University of California, Irvine
Jia G. Lu, University of California, Irvine
Zhengwei Pan, Oak Ridge National Laboratory
et. al.

Document Type

Article

Publication Date

11-12-2005

Department

Department of Physics

Abstract

High growth temperatures (>1100 °C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600 °C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.

Publisher's Statement

© 2005 American Chemical Society. Publisher's version of record: https://doi.org/10.1021/nl051859n

Publication Title

Nano Letters

Recommended Citation

Wang, J., Kayastha, V., Yap, Y. K., Fan, Z., Lu, J. G., Pan, Z., & et. al. (2005). Low temperature growth of boron nitride nanotubes on substrates. Nano Letters, 5(12), 2528-2532. http://doi.org/10.1021/nl051859n
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/79