Timing driven buffer insertion for carbon nanotube interconnects

Authors

Lin Liu, Michigan Technological University
Yuchen Zhou, Michigan Technological UniversityFollow
Shiyan Hu, Michigan Technological UniversityFollow

Document Type

Book Chapter

Publication Date

4-2016

Department

Department of Electrical and Computer Engineering; Center for Cyber-Physical Systems

Abstract

In the nanoscale technology, both the device and interconnect performances affect the overall performance of the integrated circuits and systems in which they are used. So, it is quite natural to explore various solutions for devices as well as interconnects to mitigate the challenges of technology scaling and meet high-speed demand. This chapter discusses the use of carbon nanotubes (CNTs) as a potential high-speed high-performance interconnect as compared to the metal interconnects.

Publisher's Statement

Publisher's version of record: https://doi.org/10.1049/PBCS029E_ch10

Publication Title

Nano-CMOS and Post-CMOS Electronics: Devices and Modelling

Recommended Citation

Liu, L., Zhou, Y., & Hu, S. (2016). Timing driven buffer insertion for carbon nanotube interconnects. Nano-CMOS and Post-CMOS Electronics: Devices and Modelling. http://doi.org/10.1049/PBCS029E_ch10
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/778