Patterened growth of boron nitride nanotubes by catalytic chemical vapor deposition

Authors

Chee Huei Lee, Michigan Technological University
Ming Xie, Michigan Technological University
Vijaya Kayastha, Michigan Technological University
Jiesheng Wang, Michigan Technological University
Yoke Khin Yap, Michigan Technological UniversityFollow

Document Type

Article

Publication Date

1-13-2010

Department

Department of Physics

Abstract

For the first time, patterned growth of boron nitride nanotubes is achieved by catalytic chemical vapor deposition (CCVD) at 1200 °C using MgO, Ni, or Fe as the catalysts, and an Al₂O₃ diffusion barrier as underlayer. The as-grown BNNTs are clean, vertically aligned, and have high crystallinity. Near band-edge absorption ∼6.0 eV is detected, without significant sub-band absorption centers. Electronic transport measurement confirms that these BNNTs are perfect insulators, applicable for future deep-UV photoelectronic devices and high-power electronics.

Publisher's Statement

© 2010 American Chemical Society. Publisher's version of record: https://doi.org/10.1021/cm903287u

Publication Title

Chemistry of Materials

Recommended Citation

Lee, C. H., Xie, M., Kayastha, V., Wang, J., & Yap, Y. K. (2010). Patterened growth of boron nitride nanotubes by catalytic chemical vapor deposition. Chemistry of Materials, 22(5), 1782-1787. http://doi.org/10.1021/cm903287u
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/72