Effective growth of boron nitride nanotubes by thermal chemical vapor deposition
Document Type
Article
Publication Date
10-9-2008
Department
Department of Physics
Abstract
Effective growth of multiwalled boron nitride nanotubes (BNNTs) has been obtained by thermal chemical vapor deposition (CVD). This is achieved by a growth vapor trapping approach as guided by the theory of nucleation. Our results enable the growth of BNNTs in a conventional horizontal tube furnace within an hour at 1200 °C. We found that these BNNTs have an absorption band edge of 5.9 eV, approaching that of single h-BN crystals, which are promising for future nanoscale deep-UV light emitting devices.
Publication Title
Nanotechnology
Recommended Citation
Lee, C. H.,
Wang, J.,
Kayastha, V.,
Huang, J.,
&
Yap, Y. K.
(2008).
Effective growth of boron nitride nanotubes by thermal chemical vapor deposition.
Nanotechnology,
19(45).
http://doi.org/10.1088/0957-4484/19/45/455605
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/67
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Publisher's Statement
©2008 IOP Publishing Ltd. Publisher's version of record: https://doi.org/10.1088/0957-4484/19/45/455605