Effective growth of boron nitride nanotubes by thermal chemical vapor deposition

Document Type

Article

Publication Date

10-9-2008

Department

Department of Physics

Abstract

Effective growth of multiwalled boron nitride nanotubes (BNNTs) has been obtained by thermal chemical vapor deposition (CVD). This is achieved by a growth vapor trapping approach as guided by the theory of nucleation. Our results enable the growth of BNNTs in a conventional horizontal tube furnace within an hour at 1200 °C. We found that these BNNTs have an absorption band edge of 5.9 eV, approaching that of single h-BN crystals, which are promising for future nanoscale deep-UV light emitting devices.

Publisher's Statement

©2008 IOP Publishing Ltd. Publisher's version of record: https://doi.org/10.1088/0957-4484/19/45/455605

Publication Title

Nanotechnology

Share

COinS