Growth and characterization of epitaxial Fe < inf> 0.8 Ga < inf> 0.2 /0.69PMN-0.31PT heterostructures
Document Type
Article
Publication Date
6-1-2009
Abstract
Fe0.8Ga0.2 films were deposited on bulk single-crystal (0 0 1) 0.69PMN-0.31PT substrates by DC magnetron sputtering to make magnetoelectric bilayer composites. Films deposited at temperatures below 600 °C were X-ray amorphous. Films deposited at temperatures of 600 °C and higher exhibited a single-crystal (0 0 1) disordered BCC structure. The crystalline FeGa films demonstrate a 45° twisted cube-on-cube epitaxial relationship with the PMN-PT substrates. Heterostructures with an X-ray amorphous FeGa film exhibited zero magnetoelectric response. Heterostructures with a 990 nm epitaxial FeGa film exhibited a large inverse magnetoelectric voltage coefficient of 13.4 (G cm)/V. © 2009 Elsevier B.V. All rights reserved.
Publication Title
Journal of Crystal Growth
Recommended Citation
Seguin, D.,
Sunder, M.,
Krishna, L.,
Tatarenko, A.,
&
Moran, P.
(2009).
Growth and characterization of epitaxial Fe < inf> 0.8 Ga < inf> 0.2 /0.69PMN-0.31PT heterostructures.
Journal of Crystal Growth,
311(12), 3235-3238.
http://doi.org/10.1016/j.jcrysgro.2009.03.020
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/6674