Electrical and structural characterization of Co and Ni silicide contacts to silicon
Document Type
Article
Publication Date
1991
Department
Department of Electrical and Computer Engineering
Abstract
Cobalt and nickel were deposited on n-type silicon (〈111〉 oriented, 0.9-1.0 Ω cm, 4.5 μm epilayer) by e-beam deposition process. These metal contacts were annealed in a quartz furnace (N2 gas atmosphere) for different temperatures and times to form low-resistivity silicides. The most consistent and lowest sheet resistence values were obtained for samples annealed at 800°C for 240 min. These sheet resistance values were 0.3-0.4 Ω □ for Co Si samples and 0.2-0.7 Ω □ for Ni Si samples. X-ray diffraction and Auger electron spectroscopy (AES) data analysis did not conclusively show the presence of the disilicide. The AES data showed some intersting similarities and differences indicating possible discrete for mation of the disilicides in that had low sheet resistance values.
Publication Title
Applied Surface Science
Recommended Citation
Kulkarni, A.,
&
Canale, A.
(1991).
Electrical and structural characterization of Co and Ni silicide contacts to silicon.
Applied Surface Science,
48-49(C), 307-311.
http://doi.org/10.1016/0169-4332(91)90349-O
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/5613