Electrical properties of ferroelectric thin film KNO3 memory devices
Document Type
Article
Publication Date
1-1-1988
Department
Department of Electrical and Computer Engineering
Abstract
Thin film non-volatile memory devices are fabricated on glass substrates by evaporating KNO3 in an ultra high vacuum system. The top and bottom gold electrodes [25 μm × 25 μm] are deposited by shadow masking in the same vacuum system. The KNO3 is protected from moisture by depositing a passivation layer of SiO. Pulse switching characteristics of these thin film memory devices show excellent signal-to-noise ratios for nonlinear and linear behavior. The integration of these transient current vs. time curves yields large values of spontaneous polarization (Ps ≈ 103 μC cm-2). Capacitance-voltage measurements made at high frequency (1 MHz) with slow ramp rates (200 mV s-1-2 V s-1) indicated well-defined thershold voltages and the presence of mobile carriers.
Publication Title
Thin Solid Films
Recommended Citation
Kulkarni, A.,
Rohrer, G.,
Narayan, S.,
&
McMillan, L.
(1988).
Electrical properties of ferroelectric thin film KNO3 memory devices.
Thin Solid Films,
164(C), 339-343.
http://doi.org/10.1016/0040-6090(88)90159-9
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/5523
