Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes
Document Type
Article
Publication Date
8-1991
Department
Department of Physics
Abstract
This paper presents a new model for spin-dependent recombination and generation processes based on the electrical detection of magnetic resonance in semiconductor p-n junction diodes. Based on a modified Shockley-Read recombination statistics, this model differs from those models previously proposed in that the spin-dependent enhancement of free-carrier capture processes can occur directly at a paramagnetic deep defect without the need for other defects nearby. This model incorporates singlet-triplet mechanisms of existing models, but is shown to be consistent with new experimental results which indicate the absence of any adjacent trapping centers.
Publication Title
Solid State Electronics
Recommended Citation
Rong, F.,
Buchwald, W.,
Poindexter, E.,
Warren, W.,
&
Keeble, D.
(1991).
Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes.
Solid State Electronics,
34(8), 835-841.
http://doi.org/10.1016/0038-1101(91)90229-R
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/5497