Growth Mechanisms of Silicon in Al-Si Alloys
Document Type
Article
Publication Date
11-1985
Department
Department of Materials Science and Engineering
Abstract
Eutectic silicon in Al-Si alloy has been examined by optical, SEM and TEM methods. Normal flake silicon grows anisotropically and has a low twin density; quench modified fibrous silicon is essentially twin free and grows isotropically (non-faceted); sodium modified silicon contains a very high twin density and the fibers are somewhat faceted. It is concluded that in the absence of sodium, molecular attachment by the TPRE mechanism is incidental but in the presence of sodium this is the dominant growth mechanism. Various aspects of the modification mechanism are discussed.
Publication Title
Journal of Crystal Growth
Recommended Citation
Lu, S.,
&
Hellawell, A.
(1985).
Growth Mechanisms of Silicon in Al-Si Alloys.
Journal of Crystal Growth,
73(2), 316-328.
http://doi.org/10.1016/0022-0248(85)90308-2
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/5326
Publisher's Statement
© 1985