Growth of epitaxial (110) 0.7Pb(Mg < inf> 1/3 Nb < inf> 2/3 )O < inf> 3 -0.3PbTiO < inf> 3 thin films on r-plane sapphire substrates by rf magnetron sputtering
The role of substrate temperature and substrate surface geometry in determining the crystal structure and crystallinity of 0.7Pb(Mg 1/3Nb 2/3)O 3-0.3PbTiO 3 (PMN-PT) thin films grown on r-plane sapphire substrates is examined. A 30-nm-thick amorphous PMN-PT seed layer deposited at 250°C and subjected to rapid thermal annealing at 850°C results in the formation of an epitaxial (110) perovskite PMN-PT growth template that can be used for subsequent growth of single-crystal (110) perovskite PMN-PT films at elevated temperature. The data show that single-crystal perovskite is promoted when the films nucleate with the 〈 111 ̄ PMN-PT direction parallel to the 〈 0221̄ Al 2O 3 direction. © 2009 TMS.
Journal of Electronic Materials
Growth of epitaxial (110) 0.7Pb(Mg < inf> 1/3 Nb < inf> 2/3 )O < inf> 3 -0.3PbTiO < inf> 3 thin films on r-plane sapphire substrates by rf magnetron sputtering.
Journal of Electronic Materials,
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