Growth of epitaxial (110) 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin films on r-plane sapphire substrates by rf magnetron sputtering
Document Type
Article
Publication Date
9-25-2009
Department
Department of Materials Science and Engineering
Abstract
The role of substrate temperature and substrate surface geometry in determining the crystal structure and crystallinity of 0.7Pb(Mg 1/3Nb 2/3)O 3-0.3PbTiO 3 (PMN-PT) thin films grown on r-plane sapphire substrates is examined. A 30-nm-thick amorphous PMN-PT seed layer deposited at 250°C and subjected to rapid thermal annealing at 850°C results in the formation of an epitaxial (110) perovskite PMN-PT growth template that can be used for subsequent growth of single-crystal (110) perovskite PMN-PT films at elevated temperature. The data show that single-crystal perovskite is promoted when the films nucleate with the 〈 111 ̄ PMN-PT direction parallel to the 〈 0221̄ Al 2O 3 direction.
Publication Title
Journal of Electronic Materials
Recommended Citation
Krishna, L.,
Sunder, M.,
&
Moran, P.
(2009).
Growth of epitaxial (110) 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin films on r-plane sapphire substrates by rf magnetron sputtering.
Journal of Electronic Materials,
39(1), 132-137.
http://doi.org/10.1007/s11664-009-0945-6
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/5081