Effect of manganese and cobalt doping on conductivity of ZnO based varistors: A study by complex plane modulus
Document Type
Article
Publication Date
11-2008
Department
Department of Physics
Abstract
Effect of manganese and cobalt doping (0.50 mole%) on electrical properties of ZnO based varistors has been studied using complex plane modulus analysis. It is found that total resistivity of Mn doped sample is more as compared to that of Co doped sample. This has been ascribed to existence of Mn in variable valence states viz. Mn 2+, Mn 3+ and Mn 4+ which promotes hopping conduction leading to increase in the conductivity as compared to Co doped sample, in which Co exists predominantly in +3 state with traces of Co 2+ or Co +4 states. This accounts for its less conductivity. Mechanism of conduction is the same for grains and grainboundaries.
Publication Title
Journal of Materials Science: Materials in Electronics
Recommended Citation
Pandey, A.,
Prasad, A.,
Singh, S.,
Parkash, O.,
&
Kumar, D.
(2008).
Effect of manganese and cobalt doping on conductivity of ZnO based varistors: A study by complex plane modulus.
Journal of Materials Science: Materials in Electronics,
19(11), 1122-1127.
http://doi.org/10.1007/s10854-007-9484-1
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/4924