Deformation-driven electrical transport in amorphous TiO < inf> 2 nanotubes
Document Type
Article
Publication Date
10-2012
Department
Department of Materials Science and Engineering; Department of Mechanical Engineering-Engineering Mechanics
Abstract
A series of in situ transmission electron microscopy combined with scanning tunneling microscopy measurements were carried out to investigate the effect of mechanical deformation on the electrical transport properties of amorphous TiO 2 nanotubes. Under no mechanical straining, it was found that the TiO 2 nanotubes behave as electrical insulators. However, the nanotubes show semiconducting behavior under a highly deformed state. On the basis of a metal-semiconductor-metal model, it was suggested that in-shell defects, surface defect-driven conduction modes, are responsible for the appearance of the semiconducting behavior.
Publication Title
Applied Physics A: Materials Science and Processing
Recommended Citation
Asthana, A.,
Shokuhfar, T.,
Gao, Q.,
Heiden, P.,
&
Yassar, R. S.
(2012).
Deformation-driven electrical transport in amorphous TiO < inf> 2 nanotubes.
Applied Physics A: Materials Science and Processing,
109(1), 127-132.
http://doi.org/10.1007/s00339-012-7040-1
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/4704