Variable energy positron beam characterization of defects in as-grown and annealed low temperature grown GaAs
Document Type
Article
Publication Date
12-1993
Department
Department of Physics
Abstract
Variable energy positron annihilation measurements on as-grown and annealed GaAs grown by molecular beam epitaxy at temperatures between 230 and 350°C have been performed. Samples were subjected to either isochronal anneals to temperatures in the range 300 to 600°C or rapid thermal anneals to 700, 800, and 900°C. A significant increase in the S-parameter was observed for all samples annealed to temperatures greater than 400°C. The positron annihilation characteristics of the defect produced upon annealing are consistent with divacancies or larger vacancy clusters. The concentration of as-grown and anneal generated defects is found to decrease with increasing growth temperature.
Publication Title
Journal of Electronic Materials
Recommended Citation
Umlor, M.,
Keeble, D.,
Cooke, P.,
Asoka-Kumar, P.,
&
Lynn, K.
(1993).
Variable energy positron beam characterization of defects in as-grown and annealed low temperature grown GaAs.
Journal of Electronic Materials,
22(12), 1405-1408.
http://doi.org/10.1007/BF02649986
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/4429
Publisher's Statement
© 1993 The Mineral, Metal & Materials Society, Inc. Publisher’s version of record: https://doi.org/10.1007/BF02649986