Robust band gaps in the graphene/oxide heterostructure: SnO/graphene/SnO
Document Type
Article
Publication Date
6-6-2018
Department
Department of Physics
Abstract
The applicability of graphene in nanoscale devices is somewhat limited because of the absence of a finite band gap. To overcome this limitation of zero band gap, we consider vertically-stacked heterostructures consisting of graphene and SnO knowing that two-dimensional SnO films were synthesized recently. Calculations based on density functional theory find that the oxide monolayer can induce a notable band gap in graphene; 115 meV in SnO/graphene/SnO heterostructures. Additionally, the band gap of graphene can be maintained under a relatively high electric field (≈109 V m−1) applied to the heterostructures because of the electrostatic screening effect of the oxide layer. The calculated results suggest the relative superiority of the graphene/oxide heterostructures over graphene/BN heterostructures for the nanoscale devices based on graphene.
Publication Title
Physical Chemistry Chemical Physics
Recommended Citation
Guo, Q.,
Wang, G.,
Pandey, R.,
&
Karna, S.
(2018).
Robust band gaps in the graphene/oxide heterostructure: SnO/graphene/SnO.
Physical Chemistry Chemical Physics,
20(26), 17983-17989.
http://doi.org/10.1039/C8CP01483C
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/416
Publisher's Statement
©the Owner Societies 2018. Publisher’s version of record: https://doi.org/10.1039/C8CP01483C