Modeling of electronic transport in metallic carbon nanotube interconnects in the presence of electron-phonon interactions
Document Type
Article
Publication Date
11-2012
Department
Department of Electrical and Computer Engineering
Abstract
Metallic carbon nanotubes are being considered as a candidate to potentially replace copper as an interconnect material in next generation nanotechnology integrated circuits.In this article, we have examined the electronic transport behavior in metallic carbon nanotubes using a self consistent nonequilibrium Green's function method. We have included the effects of electron-phonon interactions in our model. Results show that conductivity decreases in the ballistic limit due to localized disorder effects even with a weak disorder potential. We are also able to show that optical phonons (both LO and TO modes) are the dominant mechanisms that govern the mean free path of conduction in the nanotube. Our calculations show an excellent agreement with experimental results available in the literature.
Publication Title
Microwave and Optical Technology Letters
Recommended Citation
Parkash, V.,
&
Goel, A. K.
(2012).
Modeling of electronic transport in metallic carbon nanotube interconnects in the presence of electron-phonon interactions.
Microwave and Optical Technology Letters,
54(11), 2477-2483.
http://doi.org/10.1002/mop.27145
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/3780
Publisher's Statement
© 2012 Wiley Periodicals, Inc. Publisher’s version of record: https://doi.org/10.1002/mop.27145