Modeling of very high-frequency effects in the interconnection delays on GaAs-based VLSICs

Authors

A. K. Goel, Michigan Technological UniversityFollow
S. E. Weitemeyer, Michigan Technological University

Document Type

Article

Publication Date

11-5-2001

Department

Department of Electrical and Computer Engineering

Abstract

In this paper, a model of the propagation delays in the interconnection lines on GaAs-based very high-speed integrated circuits is presented. The model includes the very high-frequency effects, such as geometric dispersion, substrate losses, and conductor losses. The model is used to simulate the dependence of interconnect delays on the frequency of operation, interconnect length, width, material resistivity, load capacitance, and the driving source resistance.

Publisher's Statement

© 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett. Publisher’s version of record: https://doi.org/10.1002/mop.1404

Publication Title

Microwave and Optical Technology Letters

Recommended Citation

Goel, A., & Weitemeyer, S. (2001). Modeling of very high-frequency effects in the interconnection delays on GaAs-based VLSICs. Microwave and Optical Technology Letters, 31(3), 229-233. http://doi.org/10.1002/mop.1404
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/3775