Zero-temperature-coefficient biasing point of a fully-depleted SOI MOSFET
Document Type
Article
Publication Date
6-5-2003
Department
Department of Electrical and Computer Engineering
Abstract
The gate characteristics (ID-VGS) of fully depleted, lightly doped, enhanced SOI n-MOSFET are simulated over a wide range of operating temperature (300-600 K) by using the SILVACO TCAD tools. Simulation results show that there exists a biasing point where the drain current and the transconductance are temperature independent. Such a point is known as the zero-temperature coefficient (ZTC) bias point. The drain-current ZTC points are identified in both the linear and saturation regions. The transconductance ZTC exists only in the saturation region.
Publication Title
Microwave and Optical Technology Letters
Recommended Citation
Tan, T.,
&
Goel, A.
(2003).
Zero-temperature-coefficient biasing point of a fully-depleted SOI MOSFET.
Microwave and Optical Technology Letters,
37(5), 366-370.
http://doi.org/10.1002/mop.10920
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/3774
