Modeling of transverse propagation delays in a GaAs MESFET
A numerical model of the transverse propagation delays in a GaAs MESFET is presented. This model allows for ramp input signals, considers the resistance of the driving source, and includes more accurate values of the MESFET parameters. The model has been used to study the dependence of these delays on the various MESFET design parameters. The results can be utilized for the optimization of the MESFET parameters for minimum propagation delays. © 1997 John Wiley & Sons, Inc.
Microwave and Optical Technology Letters
Modeling of transverse propagation delays in a GaAs MESFET.
Microwave and Optical Technology Letters,
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