Modeling of transverse propagation delays in a GaAs MESFET
Document Type
Article
Publication Date
12-7-1998
Department
Department of Electrical and Computer Engineering
Abstract
A numerical model of the transverse propagation delays in a GaAs MESFET is presented. This model allows for ramp input signals, considers the resistance of the driving source, and includes more accurate values of the MESFET parameters. The model has been used to study the dependence of these delays on the various MESFET design parameters. The results can be utilized for the optimization of the MESFET parameters for minimum propagation delays.
Publication Title
Microwave and Optical Technology Letters
Recommended Citation
Goel, A.,
&
Mohun, V.
(1998).
Modeling of transverse propagation delays in a GaAs MESFET.
Microwave and Optical Technology Letters,
14(5), 297-301.
http://doi.org/10.1002/(SICI)1098-2760(19970405)14:5<297::AID-MOP14>3.0.CO;2-4
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/3308