Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets

Authors

Peifu Cheng, Michigan Technological UniversityFollow
Kai Sun, University of Michigan, Ann Arbor
Yun Hang Hu, Michigan Technological UniversityFollow

Document Type

Article

Publication Date

1-13-2016

Department

Department of Materials Science and Engineering

Abstract

© 2015 American Chemical Society. Memristor, which had been predicted a long time ago (Chua, L. O. IEEE Trans. Circuit Theory 1971, 18, 507), was recently invented (Strukov, D. B.; et al. Nature 2008, 453, 80). The introduction of a memristor is expected to open a new era for nonvolatile memory storage, neuromorphic computing, digital logic, and analog circuit. Furthermore, several breakthroughs were made for memristive phenomena and transistors with single-layer MoS2 (Sangwan, V. K.; et al. Nat. Nanotechnol. 2015, 10, 403. van der Zande, A. M.; et al. Nat. Mater. 2013, 12, 554. Liu, H.; et al. ACS Nano 2014, 8, 1031. Bessonov, A. A.; et al. Nat. Mater. 2015, 14, 199. Yuan, J.; et al. Nat. Nanotechnol. 2015, 10, 389). Herein, we demonstrate that 2H phase of bulk MoS2 possessed an ohmic feature, whereas 1T phase of exfoliated MoS2 nanosheets exhibited a unique memristive behavior due to voltage-dependent resistance change. Furthermore, an ideal odd-symmetric memristor with odd-symmetric I-V characteristics was successfully fabricated by the 1T phase MoS2 nanosheets via combining two asymmetric switches antiserially.

Publication Title

Nano Letters

Recommended Citation

Cheng, P., Sun, K., & Hu, Y. H. (2016). Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets. Nano Letters, 16(1), 572-576. http://doi.org/10.1021/acs.nanolett.5b04260
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/2408