Thermodynamically stable tungsten ohmic contacts to n-In 0.53Ga0.47As

Document Type

Article

Publication Date

1-1-1998

Abstract

Based on a thermodynamic assessment of the W-In-Ga-As quaternary system, the metal W was selected as a thermodynamically stable ohmic contact material to n-In0.53Ga0.47As. As-deposited contacts (on n ∼ 1.4 × 1018 cm-3 In0.53Ga0.47As) had average specific contact resistances of 7 × 10-7 Ω · cm2 as measured using the transmission line model. The contact resistances remained unchanged after rapid thermal annealing at 400°C for 1 min or at 600°C for 1 min, and exhibited no degradation in electrical properties even after long-term annealing at 500°C for 100 h. Transmission electron microscopic examination of the contacts showed no interfacial reaction. The present investigation demonstrates the power of thermodynamics in identifying stable ohmic contacts to multicomponent semiconductors.

Publication Title

Journal of Materials Research

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