Electronic structure of high pressure phase of AIN
Document Type
Article
Publication Date
1-1-1993
Abstract
Results of ab initio Hartree—Fock calculations for the electronic structure of aluminum nitride in the (high-pressure) rocksalt phase are reported. In the rocksalt phase, the calculated lattice constant is 3.982 A with the bulk modulus of 329 GPa. The band structure is predicted to be indirect at the X point with a gap of 8.9 eV. In this phase, the bonding is shown to be essentially ionic between Al and N. The direct gap shows a stronger linear dependence on pressure with a pressure derivative of 68 meV/GPa compared to that of the indirect gap with a pressure derivative of 31.7 meV/GPa. © 1993, Materials Research Society. All rights reserved.
Publication Title
Journal of Materials Research
Recommended Citation
Pandey, R.,
Sutjianto, A.,
Seel, M.,
&
Jaffe, J.
(1993).
Electronic structure of high pressure phase of AIN.
Journal of Materials Research,
8(8), 1922-1927.
http://doi.org/10.1557/JMR.1993.1922
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/13530