Dependence of the electrical properties of KN03 memory devices on fabrication and processing parameters
Document Type
Article
Publication Date
1-1-1989
Abstract
Several fabrication and processing parameters such as deposition rate, thickness of the sample, annealing time and temperature, and electrode materials were varied in Au-KN03-Au thin-film ferroelectric memory devices to optimize the electrical properties of these devices. The deposition rate was varied from 2.5 to 10 nm/min in steps of 2.5 nm/min. The samples deposited at a rate of 5 nm/min yielded better electrical results compared to samples deposited at other rates. The electrical testing involved pulse testing and capacitance-voltage measurements. The switching time of these devices decreased with a decrease in the thickness of KN03 as expected. However, the switching thresholds were sharper in the 200-nm-thick KNQ3, as compared to 160 and 120-nm-thick KN03 samples. The samples were annealed in forming gas at 6, 10, 17,21,24, and 44 h and no significant changes were observed in the switching time and polarization. Instead of gold electrodes, indium-tin electrodes gave better performance but they were not easily repeatable. © 1989, American Vacuum Society. All rights reserved.
Publication Title
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Recommended Citation
Kulkarni, A.,
Rohrer, G.,
McMillan, L.,
&
Adams, S.
(1989).
Dependence of the electrical properties of KN03 memory devices on fabrication and processing parameters.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films,
7(3), 1461-1466.
http://doi.org/10.1116/1.576077
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/11987
